Temporary polymer bonding for the manufacturing of thin wafers: An innovative low temperature process

The study deals with the handling of thin wafers in 3D integration. It concerns fabrication 300 mm industrial tools. Usually, manufacturing is based on a temporary bonding process performed at 200 °C using thermoplastic adhesive. In that condition bonding, thinning and dismounting are satisfactory. Moreover, adhesive flattening during results an excellent thickness uniformity bonded pairs, small total variation (TTV) value suitable for If temperature 150 or lower, not acceptable anymore. An innovative low has thus been developed. consists carrier highly uniform thickness. standard coated flattened first reversible 210 °C. After dismounting, this then to target device wafer temperature, from 110 Due pre-flattening, 80 μm thick silicon films TTV can be obtained even required by wafer. after thinning, final without any antisticking layer.